Fused vs. spiro: Kinetic,not thermodynamic preference may direct the reaction of α-carbonyl oxonium ylides

Rh(II)-catalyzed decomposition of certain cyclic α-diazocarbonyl compounds in the presence of cyclic ethers has been shown to give bicyclic ring expansion products. These are thought to arise from a [1,4]-alkyl shift toward the carbonyl oxygen atom and are in contrast with the recently observed spirocyclic products of a Stevens-type [1,2]-alkyl shift within the postulated oxonium ylide intermediate. Quantum chemical calculations performed at the B3LYP/6-31G* level of theory showed that the former reaction pathway (toward fused bicycles) is kinetically preferred.     

Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures

In_xGa${}_{1?x}$N/ZnSnN₂ quantum well structures are studied in terms of a binding energy of a donor atom. 1s and $2p_{\pm }$ impurity states are considered. The Schrödinger's and Poisson's equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-Å In_0.3Ga_0.7N/ZnSnN₂ quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold.     

Quantum communication through chains with diluted disorder

We investigate a single-qubit state transfer protocol along a channel featuring diagonal diluted disorder. In the regime where the source and destination sites are weakly coupled to the channel, we report the possibility of transmitting quantum states with high fidelity as well as establishing end-to-end entanglement in that sort of configuration. We further discuss how the performance of the protocol depends upon the availability of extended states within the disordered channel.     

Resolving quantum dots and peptide assembly and disassembly using bending capillary electrophoresis

Despite the numerous techniques developed for the studying nanoparticle and peptide interaction nowadays, sensitive and convenient assay in the process of flow, especially to simulate the self‐assembly of quantum dots (QDs) and peptide inflow in blood vessels, still remains big challenges. Here, we report a novel assay for studying the self‐assembly of QDs and peptide, based on CE using a bending capillary. We demonstrate that the semicircles numbers of the bending capillary affect the self‐assembly kinetics of CdSe/ZnS QDs and ATTO‐D₃LVPRGSGP₉G₂H₆ peptide. Moreover, benefitting from this novel assay, the effect of the position on the self‐assembly has also been realized. More importantly, we also demonstrate that this novel assay can be used for studying the stability of the QDs–peptide complex inflow. We believe that our novel assay proposed in this work could be further used as a general strategy for the studying nanoparticle–biomolecule interaction or biomolecule–biomolecule interaction.     

NOON State Generation with Phonons in Acoustic Wave Resonators Assisted by a Nitrogen‐Vacancy‐Center Ensemble

Since the quality factor of an acoustic wave resonator (AWR) reached 10¹¹, AWRs have been regarded as a good carrier of quantum information. In this paper, a scheme to construct a NOON state with two AWRs assisted by a nitrogen‐vacancy‐center ensemble (NVE) is proposed. The two AWRs cross each other vertically, and the NVE is located at the center of the crossing. By considering the decoherence of the system and using resonant interactions between the AWRs and the NVE, and the single‐qubit operation of the NVE, a NOON state can be achieved with a fidelity higher than 98.8% when the number of phonons in the AWR is $N\le 3$.     

Spin polarization and temperature dependence of electron effective mass in quantum wires

The electron effective mass in GaAs quantum wires has been estimated by using a full dynamical random-phase approximation to examine its properties versus spin polarization, temperature, and carrier density. A decrease of mass with spin polarization is seen. The minority mass increases with the polarization while the majority mass decreases and this behaviour is seen for all densities. A maximal enhancement of mass at moderate temperature around 25 K is also presented. These calculations show a qualitative consistence with results in two-dimensional systems and help to control the electronic transport in quantum wires.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Quantum simulation of zero-temperature quantum phases and incompressible states of light via non-Markovian reservoir engineering techniques

We review recent theoretical developments on the stabilization of strongly correlated quantum fluids of light in driven-dissipative photonic devices through novel non-Markovian reservoir engineering techniques. This approach allows one to compensate losses and refill selectively the photonic population so as to sustain a desired steady state. It relies in particular on the use of a frequency-dependent incoherent pump, which can be implemented, e.g., via embedded two-level systems maintained at a strong inversion of population. As specific applications of these methods, we discuss the generation of Mott Insulator (MI) and Fractional Quantum Hall (FQH) states of light. As a first step, we present the case of a narrowband emission spectrum and show how this allows for the stabilization of MI and FQH states under the condition that the photonic states are relatively flat in energy. As soon as the photonic bandbwidth becomes comparable to the emission linewidth, important non-equilibrium signatures and entropy generation appear, and a novel dissipative phase transition from a Mott Insulating state toward a superfluid (SF) phase is unveiled. As a second step, we review a more advanced configuration based on reservoirs with a broadband frequency distribution, and we highlight the potential of this configuration for the quantum simulation of equilibrium quantum phases at zero temperature with tunable chemical potential. As a proof of principle, we establish the applicability of our scheme to the Bose–Hubbard model by confirming the presence of a perfect agreement with the ground-state predictions both in the Mott insulating and superfluid regions, and more generally in all parts of the parameter space. Future prospects towards the quantum simulation of more complex configurations are finally outlined, along with a discussion of our scheme as a concrete realization of quantum annealing.     

Simple technique for the simultaneous determination of solvent diffusion coefficient in polymer by Quantum Resistive Sensors and FT‐IR spectroscopy

A simple, quick and novel method for the determination of diffusion properties through polymer films, based on Quantum Resistive Sensors made of Conductive Polymer nanoComposites is presented. The integral time lag method is employed for the calculation of diffusion coefficient, and the results are compared simultaneously with that of Fourier transform infrared spectroscopy and sorption method. Two model polymers, a semi‐crystalline poly(lactic acid) and an amorphous poly(isobutylene‐co‐isoprene), are used to validate the study. A good correlation is established between the diffusion coefficient values derived from all techniques demonstrating the interest of such reliable, simple and cheap nanosensors for the quick determination (several minutes) of diffusion properties in polymer films. Our first results suggest that this technique is meaningful for the determination of barrier properties in nanocomposite membranes filled with platelets of graphene or clay. Copyright © 2013 John Wiley & Sons, Ltd.